2SK3408 description the 2SK3408 is a switching device which can be driven directly by a 4-v power source. the 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on. features ? can be driven by a 4-v power source ? low on-state resistance r ds(on)1 = 195 m ? max. (v gs = 10 v, i d = 0.5 a) r ds(on)2 = 250 m ? max. (v gs = 4.5 v, i d = 0.5 a) r ds(on)3 = 260 m ? max. (v gs = 4.0 v, i d = 0.5 a) ? built-in g-s protection diode against esd. ordering information part number package 2SK3408 sc-96 mini mold (thin type) absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 43 5v drain to gate voltage (v gs = 0 v) v dgs 43 5v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 1.0 a drain current (pulse) note1 i d(pulse) 4.0 a total power dissipation (t c = 25c) p t1 0.2 w total power dissipation (t a = 25c) note2 p t2 1.25 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board, t 5 sec. remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit : mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ? 0.06 2.8 ?.2 1.5 0.95 1 2 3 1.9 2.9 ?.2 0.4 +0.1 ? 0.05 0.95 0.65 +0.1 ? 0.15 1 : gate 2 : source 3 : drain equivalent circuit source body diode gate protection diode marking: xf gate drain product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30.4 v, v gs = 0 v10 a gate leakage current i gss v gs = 16 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.0 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 0.5 a12.0s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 0.5 a 155 195 m ? r ds(on)2 v gs = 4.5 v, i d = 0.5 a 185 250 m ? r ds(on)3 v gs = 4.0 v, i d = 0.5 a 195 260 m ? input capacitance c iss v ds = 10 v 230 pf output capacitance c oss v gs = 0 v50pf reverse transfer capacitance c rss f = 1 mhz 30 pf turn-on delay time t d(on) v dd = 20 v18ns rise time t r i d = 0.5 a14ns turn-off delay time t d(off) v gs(on) = 10 v 115 ns fall time t f r g = 10 ? 38 ns total gate charge q g v ds = 30.4 v4.0nc gate to source charge q gs i d = 1.0 a1.0nc gate to drain charge q gd v gs = 10 v1.0nc body diode forward voltage v f(s-d) i f = 1.0 a, v gs = 0 v0.81v reverse recovery time t rr i f = 1.0 a, v gs = 0 v25ns reverse recovery charge q rr di/dt = 100 a / s16nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs (on) 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2SK3408 product specification
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